ASTM F1190-93 - 10.1.1999
 
1. Scope

1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determined using appropriate electrical test methods.

1.2 System and subsystem exposures and test methods are not included in this practice.

1.3 This practice is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The practical limits for neutron fluence ([phi]eq,1MeV,Si or [phi]eq,1MeV,GaAs) in semiconductor testing range from approximately 10 to 10 16 n/cm .

1.4 This practice addresses those issues and concerns pertaining to irradiations with neutrons of energies greater than 10 keV.

1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

 
2. Referenced Documents

DASIAC SR-94-009, April 1996,

Guide to Nuclear Weapons Effects Simulation Facilities and Techniques Available from Defense Special Weapons Agency, Washington, DC 20305-1000.

F1892-12(2018)

Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

F980-16(2024)

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

E2450-23

Standard Practice for Application of CaF2(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments

E1855-20

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

E264-19

Standard Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel

E265-15(2020)

Standard Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32

E668-20

Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

E720-23

Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics

E1250-15(2020)

Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

E721-22

Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics

E722-19

Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

E1249-15(2021)

Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

E1854-19

Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts